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A N Chandorkar a-Si activation energy alloy amorphous silicon annealing APCVD Appl applications atomic band band gap behaviour boron breakdown voltage capacitance carrier charge conductivity constant defect Delhi density deposited dielectric doped dose electrical energy loss rates etch evaporation fabricated Fermi level Fig.l frequency function GaAs gate grain boundary heating hole traps hydrogen I-V characteristics IEEE implantation increase Integrated Circuits interface Josephson kRod lattice layer Lett light soaked LPCVD material metal mobility MOS capacitors National Physical Laboratory nitridation observed obtained Ohmic parameter peak phonon photocurrent Phys Physics Pilani plasma polysilicon PVDF radiation resistance samples scattering Semiconductor Devices shows silane silicides silicon dioxide silicon films Singh solar cells Solid studied substrate superconducting surface technique Technology temperature dependence thermal thermoelectric power thin films threshold voltage transistors undoped vacuum variation W S Khokle wafers