Gallium Arsenide Mesfet Technology: Ion Implantation and Metal Contacts |
Common terms and phrases
30 minute anneal activation efficiency anneal conditions annealed at 900 annealing temperature Appl arsenic Band diagram bulk CAP condition contact resistivity contact structure contamination Cr-doped semi-insulating GaAs Debye length device diffusion dopant doping effects electrical activation electrical properties electron concentration electron mobility energy epitaxial equilibrium evaporation rate EWF model excess As pressure expected experimental Fermi energy Fermi level Figure fixture function GaAs annealed GaAs surface gallium Hâ‚‚ heterojunction implant dose implanted GaAs InAs integrated circuit interface phases ion implantation J.M. Woodall lattice layer Lett MESFET metal Mn accumulation Mn surface accumulation n-GaAs n-type n-type dopant n-type GaAs nanometers NPCArAs NPCH NPCHAS ohmic contact outdiffusion oxide p-type surfaces PCHAs condition Phys PL spectra proximate contact quartz sample holder Schottky barrier Schottky barrier height semiconductor shallow donor shown in Fig silicon SIMS profile species substrate undoped valence band xs.c