Rapid Thermal and Integrated Processing III: Volume 342, Volume 3Jimmie J. Wortman The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. |
Contents
RIPPLE PYROMETRY FOR RAPID THERMAL ANNEALING | 3 |
SPECKLE TECHNIQUES FOR NONCONTACT TEMPERATURE | 17 |
TEMPERATURE MEASUREMENT OF METALLIZED SILICON WAFERS | 23 |
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1994 Materials Research alloy ambient Appl atoms bubbler capacitance capacitor chamber chemical vapor deposition concentration device dielectric diffusion dopant doping effect electrical Electrochem electron emissivity energy epitaxial etching experimental films flow rate function furnace annealing GaAs gas flow gate growth rate heating high temperature higher hydrogen implanted in-situ clean increased lamp layer leakage current Lett LPCVD Materials Research Society measured metal MOCVD native oxide nitrogen obtained optical oxide thickness oxides grown oxygen parameters peak Phys plasma polysilicon pressure Proc pyrometer quartz radiation rapid thermal annealing rapid thermal oxidation rapid thermal processing reactor RTCVD samples sccm semiconductor sheet resistance shown in Figure shows SiH2Cl2 silicide silicon dioxide silicon nitride SIMS SiO2 structures substrate Symp technique thermal budget thermal oxidation thin TiSi2 titanium Torr uniformity UVCVD voltage wafer wafer surface wafer temperature wet oxidation