Novel 1.3 micron high speed directly modulated semiconductor laser device designs and the development of wafer bonding technology for compliant substrate fabrication

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Cornell University, January, 2000 - 284 pages
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Contents

InGaAsGaAs LASERS FLIP CHIP BONDED
18
LONGWAVELENGTH LASERS ON GaAs lllB
43
1 3 fim LASERS ON TERNARY AND COMPLIANT
62
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