Novel 1.3 Micron High Speed Directly Modulated Semiconductor Laser Device Designs and the Development of Wafer Bonding Technology for Compliant Substrate FabricationCornell University, 2000 - 284 pages |
Contents
DEMAND FOR 1 3 µm HIGH SPEED OPTICAL SOURCES | 7 |
InGaAsGaAs LASERS FLIP CHIP BONDED | 18 |
LONGWAVELENGTH LASERS ON GaAs 111B | 43 |
Copyright | |
4 other sections not shown
Common terms and phrases
1.3 µm emission 1.3 µm lasers active region air pockets alloy anneal Applied Physics Letters approximately bonded devices bonded to diamond bonding front bubbles calculations cavity compliant substrates compressive strain conduction band confinement energy density device designers diamond heat sinks diaphragm differential gain direct bandgap directly modulated bandwidth dislocations effective mass electron epilayer epitaxial fiber optic film flip chip bonding GaAs GaAs barriers GaAs substrates GaAs-based Hamiltonian heavy hole high speed performance III-V improved in-plane increased InGaAs InGaAs/GaAs lasers injection current InP-based lasers interface laser diodes laser structure lattice constant longer wavelengths material system MB critical thickness mismatched optical guide optical sources ordering parameter particulates photon quantum confinement quantum dot quartz QW laser resonance frequency samples semiconductor lasers shown in Figure solder subband superlattice surface ternary substrate threshold current transition energy transmission image typically valence band VCSEL Waals bonding wafer bonding system wafer pair wavelengths