Physics of Thin Films: Advances in Research and DevelopmentMaurice H. Francombe, John L. Vossen Physics of Thin Films: Advances in Research and Development primarily deals with the influence of ions or optical energy on the deposition, properties, and etching on thin films. The book is a collection of five articles, with one article per chapter. Chapter 1 covers ionized cluster beam deposition; epitaxy; and film-formation mechanism. Chapter 2 discusses the activated reactive evaporation process; the deposition of refractory compounds; the role of plasma in the process; and its applications. Chapter 3 focuses on ion-beam processing of optical thin films; ion sources and ion-surface interactions; and the different kinds of bombardment involved. Chapter 4 deals with laser induced etching - its mechanisms, methods, and applications. Chapter 5 talks about contacts to GaAs devices; Fermi-level pinning; and heterojunction contacts. The book is recommended for physicists and engineers in the field of electronics who would like to know more about thin films and the progresses in the field. |
Contents
| 1 | |
Chapter 2 The Activated Reactive Evaporation Process | 59 |
Chapter 3IonBeam Processing of Optical Thin Films | 109 |
Chapter 4 LaserInduced Etching | 151 |
Chapter 5 Contacts to GaAs Devices | 199 |
| 227 | |
| 241 | |
Common terms and phrases
A. W. Johnson ablation absorption acceleration voltage adhesion alloyed amorphous annealing Appl argon atoms bandgap boron nitride Braslau cluster beam coatings coefficient contact resistivity crucible crystalline D. J. Ehrlich decrease dependence deposition temperature diffraction doped effects electron epitaxial etch rate films deposited formation GaAs glass substrate GPPC growth H films heated increase interface ion bombardment ion-beam ionized ionized clusters laser laser-induced etching layer Lett Materials Research Society measured mechanical metal microstructure n-GaAs n-type nitride nm light observed ohmic contact optical oxide oxygen Phys plasma power densities pressure Proc produce properties R. F. Bunshah R. M. Osgood ratio reactants reaction reactive sputtering reported Schottky barrier Seebeck coefficient semiconductor sheet resistance shown in Fig SiO2 solid-phase photochemical species stoichiometry structure substrate substrate temperature Takagi Technol thermal thickness thin films Thin Solid Films tion torr wavelength Yamada