A Gallium Arsenide P-N Junction Avalanche Diode Oscillator |
Contents
DIODE PREPARATION | 8 |
DIODE CHARACTERISTICS | 18 |
PERFORMANCE AS AN OSCILLATOR | 30 |
2 other sections not shown
Common terms and phrases
103 Amp/cm² Bias A/cm² air-abrasion Amp/cm² Bias Current Area at Maximum area diodes avalanche diode oscillators bellows Bias Current Density bias levels bias voltage Capacitive and Inductive capacitor cat-whisker characteristic impedance circuit cm² coaxial conduction band Crystal Cartridge crystal detector Density with Capacitive depletion layer capacitance depletion layer width depletion region diameter Diode Area Diode Efficiency DIODE MESA AREA Diode operating DIODE PREPARATION Diode Taken EFFICIENCY AT MAXIMUM electric field epitaxial etch FREQUENCY GHZ frequency increase frequency meter frequency range Function of Diode GaAs Gallium Arsenide germanium higher impact ionization kv/cm lacquer leakage current lower frequencies Maximum Efficiency Mesa Formation microns Microscope microsecond negative real negative resistance optimum frequency output power P-N junction avalanche percent Phillipsburg R-F Power Output reactance Schematic of Diode shorting plane shown in Figure slotted line Small-Signal Diode Impedance solder surface Threshold Voltage Transactions on Electron tunable turn-on wafer waveguide Κε