Journal of the Physical Society of Japan, Volume 49Physical Society of Japan, 1980 - Electronic journals |
Contents
Study of InGap States in Hydrogenated Amorphous Silicon by Thermally and Optically | 1205 |
A Study of Geminate Recombination Process in Terms of pin Basis Drift Type Photovoltaic | 1213 |
Ion Implantation and Hydrogen Profiling in Amorphous Silicon Films and pn Junctions | 1221 |
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absorption alloys amplitude angle anisotropy antiferromagnetic approximation atoms axis band Buneman instability calculated Chem coefficient collision component corresponding Cr3+ cross sections curves decay decreases denote density dielectric constant discussed effect electron emission energy equation exchange interaction excited exciton experimental results ferroelectric ferromagnetic fluctuation frequency function given Hamiltonian increases intensity interaction K₁ kbar lattice layer Lett linear magnetic field measured method mode molecule nonlinear observed obtained paramagnetic parameters particles peak phase transition phonon Phys plasma plasmon polarization potential present pressure Raman Raman scattering range ratio region relaxation resonance respectively sample scattering shown in Fig shows soliton solution spectra spectrum spin spin-lattice relaxation structure susceptibility T₁ tanh temperature dependence theoretical theory thermal tion transition temperature valence band values vector velocity wave wave vector wavenumber