Charge transfer complexes in molecular electronics: approaching metallic conduction
University of California, San Diego, 2007 - 284 pages
An infrared spectroscopic method for determining the degree of charge transferred in CT complexes is also presented. The degree of charge transferred (amount of molecular doping) has a bearing on the conductances of the CT complexes. Surface attachment of CT complexes to silicon is presented as are synthetic methods for tuning molecular conductance.
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Properties of ChargeTransfer Complexes
of Degree of Charge Transferee
ChargeTransfer Complexes on Silicon Surfaces
6 other sections not shown
alkene arene ring benzenes BPDI chapter charge transfer Charge Transfer Complexes charge-transfer complex Chem CN stretching frequency complexes with TCNE conductance histogram conductance measurements conductance steps conductance traces conductors crystals CT complex CT complex formation dative structure degree of charge diisocyanide DMPDI donation doping electron acceptor electron density electron donor equation estimated Fermi energy gold substrates gold surfaces hexamethylbenzene hydrosilylation image dipole increase in conductance infrared spectra infrared spectroscopy isonitrile Kubiak Langmuir Lett metallic method methyl-substituted benzenes methylene chloride molecular conduction molecular electronics molecular orbital molecular system observed olefins peaks phenylenediisocyanide Phys PM-IRAS spectra PMS-TCNE purchased from Aldrich reaction Reifenberger scanning tunneling microscope self-assembled monolayers shown in figure silicon surfaces single molecules solution spectrum Stires STM tip styrene Synthetically Tuning TCNE TCNE CT complex TCNE1 TCNQ tetracyanoethylene tetracyanoethylene TCNE thiol TMDAB TMDAB-TCNE TMDVB TMPDI TMPDI-TCNE CT complex TMXYL TPDI TTF-TCNQ V(cn wavefunction x-ray photoelectron