Fabrication and DC Performance of Self-aligned GaAs Gate SISFET |
Common terms and phrases
2DEG 300K I-V characteristics 77K SISFET AlGaAs AlGaAs/GaAs amount of undercut angled implant bias voltage blow dry capacitance carrier concentration conduction band decrease density depletion device performance device structure diffusion doping drain current drain regions effects electron mobility etch rate extrinsic transconductance Figure flow rate gas pressure gate contact gate layer gate length devices gate length SISFET gate voltage gate width SISFETs heterojunction heterostructure higher insulator interface layer structure lithography lower mA/mm MARKER mask metal mS/mm n*-GaAs gate non-angled implant obtained ohmic contacts photoresist Phys rapid thermal annealing reactive ion etching sample sccm self-aligned sheet resistivity showed shown in Fig Si+ implantation SISFET in Fig SISFET inverter SISFET processing source and drain source resistance substrate surface thickness threshold voltage transfer characteristics undoped AlGaAs undoped gap region W/cm² wafer wet chemical etch µm gate length µm gate width