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ElectronPhonon Interaction and Optical Gain Value
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0ptical A.S.Nasibov absorption edge active element active-region ampoule annealing band bandgap beam binary compounds calculated carriers cathode-ray tubes cathodoluminescence CdS crystals CdS1_xSex CdSe chalcogen components composition corresponding current density curve degradation dependence determined diameter differential efficiency dislocations electron-beam current electron-hole emission exciton exciton lines exciton reflection spectra experimental far-field distribution GaAs GaSb growth heat heterostructures II-VI semiconductor II-VI semiconductor compounds increases InSb intensity interaction isoelectronic L.G.Suslina L0FS L0FSs laser characteristics laser elements Laser Screens lasers with longitudinal lasing power lasing threshold lasing wavelength layer LCRTs Lebedev Physics Institute luminescence maximum mirror mode Moscow NNCs concentration nonequilibrium nonuniformity observed obtained optical P.V.Reznikov parameters PCCs phonons Phys polishing presented Quantum Electronics radiation recombination reflection coefficient resonator length samples scanning Semiconductor Lasers single crystals solid solutions spectrum stoichiometry structure studies substrate surface thermal thickness threshold current totally reflecting transitions V.I.Kozlovsky values wafer wavelength ZnSe