Time Resolved Luminescence Measurements of Gallium Arsenide and of Gallium Arsenide Photodetectors |
Common terms and phrases
active layer active region AlGaAs algorithm Appl ASWRIT+ASSAMF Ballantyne band-to-band recombination best fit bias voltage bimolecular broadband calculation CALL OPNPSA('TYPE CALL TNOU INPUT capacitance capacitor carrier population carrier transport Chapter conduction band curve Czochralski described device of Fig DIST(I distribution DLTAT doped doping density dye laser effects electrons and holes electrostatic potential energy equilibrium evaporation experimental experiments Figure FNAME function GaAs GaAs epilayers GaAs samples GALLIUM ARSENIDE high fields hole sweepout inductor inescence laser power Lehmen Lett lifetime lightly doped sample Luminescence decay luminescence measurements luminescence signal Mask Level micron NINCR nonlinearity nonradiative decay Np(t NTOT ohmic contact OLAP perturbation phonon photoconductor photoexcited carrier density photoresist Phys picosecond plot Poisson's equation power law probe created carriers pump pump-probe quasi-Fermi level radiative rate equation resolved measurements scence Schottky diode semiconductor Shorinji Kempo shown in Fig shows simple thesis time-resolved transit VELH velocity voltage drop wafers wavelength