Amplifier and Memory Devices, with Films and DiodesNorah S. Prywes |
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alloy amplitude anisotropy applied field assumed AT/M bias calculated capacitance capacitor characteristic component conduction conduction band conductor constant critical current critical field cryotron current density demagnetizing device dewar digit line drive easy direction effect electrons element energy equation equivalent circuit ferromagnetic flux gain gate geometry ground plane hysteresis impedance indicated in Fig inductance Joule heating junction liquid helium longitudinal loop lower-sideband magnetic field magnetic moment material maximum memory metal negative resistance noise figure noise temperature nonlinear normal nsec obtained operating point oscillations output P-N junction parametric amplifier parametron Permalloy Permalloy films phase Phys Pohm ratio region resistor reverse rotation Section sense line shown in Fig signal frequency stability storage substrate superconducting surface switching temperature termination thermal thickness thin film tion transition transverse field tunnel diode Uenohara valence band varactor voltage wire word line zero μο