Proceedings of the 18th International Conference on the Physics of Semiconductors: Stockholm, Sweden, August 11-15, 1986, Volume 2

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World Scientific Publishing, 1987 - Technology & Engineering - 1891 pages
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Contents

A Defect Reactions Interstitials and Vacancies
787
Defect Dynamics in IIIV Semiconductors Invited
793
Free Energy of Formation of Lattice Vacancies in Silicon
801
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