18th International Conference on the Physics of Semiconductors: Stockholm, Sweden, August 11-15, 1986, Volume 2 |
Contents
A Defect Reactions Interstitials and Vacancies | 785 |
Defect Dynamics in IIIV Semiconductors Invited | 793 |
Free Energy of Formation of Lattice Vacancies in Silicon | 801 |
Copyright | |
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Common terms and phrases
absorption acceptor agreement Appl approximation atoms band bond bound calculated carrier charge compared complex concentration conduction band constant correlation corresponding crystal decreases deep defect density dependence determined diffusion direct discussed donor doped effects electric electron emission energy excitation experimental experiments field Figure function GaAs given gives higher hole hydrogen impurity increase indicate intensity interaction lattice Lett lower luminescence magnetic material measurements method n-type neutral observed obtained optical pairs parameters peak phonon Phys Physics position potential present pressure properties pulse Raman range recombination REFERENCES relative relaxation reported resonance samples scattering semiconductors shallow shift shown in Fig silicon similar Solid spectra spectrum stress strong structure temperature theory thermal tion transition trapping University valence