Materials Research in Low GravitySPIE, 1997 - Crystal growth |
Contents
Bulk growth of widebandgap IIVI compound semiconductors by physical vapor transport | 7 |
Processing of mercurous chloride in space 312303 | 22 |
Inert gases in closed crystal growth systems 312304 | 34 |
Copyright | |
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Common terms and phrases
absorption ampoule ampoule walls annealing aspect ratio axial band gap beam calculated CdTe Center Chemical Vapor Deposition coefficient component composition concentration convection crystal growth cylinder DCVA density deposition diffusion dopant doped effects electric emission equation experimental experiments flight flow field fluid furnace fused silica gases gravity growing crystals grown growth ampoule heat HgCdTe Huntsville hydrogen inhomogeneity interface laser layer liquid crystal magnetic damping magnetic field mass flux measured melt mercurous chloride method microgravity environment molecules morphology nanoparticles NASA nonlinear optical nucleation OARE data obtained Orbiter outgassing parameters partial pressure particles PDLC phase photodeposition Phys physical vapor transport properties radial Rayleigh number reactor real-time residual acceleration residual gas sample Science semiconductor shown in Figure solid solidification solution source material Space SPIE Vol stoichiometry structure substrate surface susceptor technique temperature gradient thermal thin films transport rate vacuum vector velocity wavelength ZnSe