Analysis and Design of Analog Integrated Circuits
This edition combines the consideration of metal-oxide-semiconductors (MOS) and bipolar circuits into a unified treatment that also includes MOS-bipolar connections made possible by BiCMOS technology. Contains extensive use of SPICE, especially as an integral part of many examples in the problem sets as a more accurate check on hand calculations and as a tool to examine complex circuit behavior beyond the scope of hand analysis. Concerned largely with the design of integrated circuits, a considerable amount of material is also included on applications.
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BIPOLAR MOS AND BiCMOS INTEGRATEDCIRCUIT
SINGLETRANSISTOR AND TWOTRANSISTOR
TRANSISTOR CURRENT SOURCES AND ACTIVE LOADS
5 other sections not shown
analog circuits analysis applied approximately Assume base current base-emitter basic amplifier bias current biased BiCMOS bipolar transistor breakdown voltage calculated capacitance capacitor cascode Chapter circuit of Fig CMOS collector current collector-base common-base common-emitter common-mode configuration current gain current source depletion region device diffusion diode doping drain effect emitter follower emitter-coupled pair Equation example feedback network Figure forward-active region frequency response gate gives implant impurity input offset voltage input resistance input stage input voltage integrated circuits integrated-circuit JFET junction large-signal lateral pnp maximum mismatch MOSFET npn transistor operational amplifier output current output impedance output resistance output stage output voltage oxide p-channel p-type parameters pinch-off polysilicon power dissipation resistor saturation sheet resistance shown in Fig signal silicon small-signal equivalent circuit substrate temperature threshold voltage transconductance transfer characteristic typical voltage gain wafer zero zero-value time constant