VLSI Electronics: Microstructure Science, Volume 11Norman G. Einspruch Good,No Highlights,No Markup,all pages are intact, Slight Shelfwear,may have the corners slightly dented, may have slight color changes/slightly damaged spine. |
Contents
IV | 56 |
Chapter 3 | 87 |
The Future Impact of GaAs Digital | 133 |
Copyright | |
14 other sections not shown
Common terms and phrases
2DEG achieved AlGaAs amplifier annealing Appl applications bipolar transistor capacitance channel chip Circuit Symp components Conf current gain DCFL density design rules dielectric diode donor doping dose drain Electron Devices emitter encapsulant epitaxial etching fabrication FET logic frequency function GaAs GaAs FET GaAs Integr GaAs MESFET GaAs MMIC GaAs substrate Gallium arsenide gate delay gate length growth HEMT heterojunction bipolar heterojunction bipolar transistor heterostructure high-speed IEEE Trans impedance impurity inductance input integrated circuits interconnect ion implantation ionizing JFET layer Lett logic gate material measurements MESFET metal microwave MMIC mobility monolithic n-type nsec ohmic contact ohms on-wafer oscillator output parameters parasitic performance Phys power dissipation probe psec radiation resistance Schottky barrier SDHT structures self-aligned semiconductor shown in Fig shunt signal silicon speed static RAM surface switching Tech techniques temperature thickness tion transconductance transmission line VLSI wafer Zuleeg