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Invited Keynote Paper
SOI Devices and Circuits
36 other sections not shown
1/f noise analysis annealing applications breakdown voltage calculated capacitance capacitor carrier cell cermet characteristics circuit CMOS coefficient components concentration conductivity conductor core decrease dependence devices dielectric diffusion digital PWM diode doping drain effect electric field electron epitaxial equation etching experimental fabricated ferroelectric Figure filter frequency function gate voltage IEEE IEEE Trans implantation increase inductor input integrated circuits interface laser layer linear logic materials matrix measured memory array metal method Microelectronics microwave mobility MOSFET noise normal DRAM obtained ohmic contacts on-resistance operation optical optimization oscillator output oxide oxygen parameters performed phase planar transformer plasma polymer Proc pulse region resistance resistors S-SGT DRAM sample semiconductor sensor shown in Fig SiGe signal silicide silicon simulation substrate surface switch tactile techniques temperature test structure thermal thick film thick-film resistors threshold voltage transistor VHDL wafer width