1990 IEEE MTT-S International Microwave Symposium Digest: May, 8-10, 1990, Dallas Convention Center, Dallas, Texas, Volume 3

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IEEE, 1990 - Microwave devices - 1371 pages

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Contents

F2 A HexaMode Bandpass Filter 207
925
B1 Classes of Bandpass Filters Having an Arbitrary Wide Stopband and Design
926
DawsonWestinghouse
932
Copyright

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amplifier analysis analyzer antenna applications array attenuator bandwidth bias calculated calibration capacitance characteristics chip circuit components coplanar coplanar waveguide coupling curve Department of Electrical detector device dielectric constant diode discontinuities drain dynamic range E-plane efficiency Electronics equation filter FREQUENCY GHz function GaAs GaAs MESFET gain gate Gunn diode harmonic HEMT IEEE IEEE Trans impedance input power insertion loss integrated Laboratories layer linear lossy matching measured MESFET method microstrip Microwave Microwave Theory Tech millimeter-wave MMIC mode module Monolithic noise figure nonlinear operation optimized oscillator output power parameters performance phase shifter PIN diode planar port power splitter probe radiation reflection coefficient region resonator S-parameters shown in Figure signal stripline structure substrate switch technique Technology thickness transconductance transmission line transverse University values vector voltage VSWR wafer waveguide width X-band

Bibliographic information

Title1990 IEEE MTT-S International Microwave Symposium Digest: May, 8-10, 1990, Dallas Convention Center, Dallas, Texas, Volume 3
1990 IEEE MTT-S International Microwave Symposium Digest: May, 8-10, 1990, Dallas Convention Center, Dallas, Texas, Krishna K. Agarwal
ContributorsIEEE Microwave Theory and Techniques Society, Institute of Electrical and Electronics Engineers
PublisherIEEE, 1990
Original fromthe University of California
DigitizedAug 1, 2011
Length1371 pages
  
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