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2DEG absorption Academy of Sciences acceptor AlGaAs alloys annealing Appl atoms barrier calculated cation chemical reaction coefficient concentration conduction band configuration corresponding curves defect density doped DX center effect electric field electron emission equation exchange interaction excitation exciton Fermi level ferromagnetic ﬁeld GaAs hole impact ionization impurity increase Institute of Physics interaction interface ions Jaszowiec 1992 kinetic Kossut lattice layer Lett Lotnikow luminescence magnetic field magnetic semiconductors magnetic susceptibility material measured metal metastable MnSe n-type observed obtained optical PACS numbers paramagnetic parameters peak phase phonon photoluminescence Phys Poland polarons Polish Academy potential presented quantum relaxation resonant samples scattering School of Semiconducting semi-insulating Semicond Semiconducting Compounds semiconductors shallow donor shown in Fig Solid spectra spectrum spin splitting structure studied substrate symmetry theoretical thermal transition tunnelling valence band voltage Warszawa wave functions XXI International School