Semiconductor Processing: A SymposiumDinesh C. Gupta |
Contents
Introduction | 3 |
The Impact of Standards on Semiconductor Quality | 9 |
Process and Device Modeling for VLSI Structures | 21 |
Effect of Process Conditions on Autodoping in Silicon Epitaxy | 38 |
An Intrinsic Gettering Process to Improve Minority Carrier Lifetimes | 49 |
Control of Gain Variations in Shallow Junction Ion Implanted | 63 |
Ion Implantation for Deep 100 m Buried Layers | 77 |
A Study of Strain in Ion Implanted Siliconmasayoshi sasaki | 96 |
Simultaneous Determination of the Boron and Phosphorus Content | 358 |
A Method to Determine the Initial Phosphorus and Boron | 364 |
The Effects of RF Electromagnetic Radiation on Spreading | 375 |
Dopant Profiling in Siliconmarek pawlik | 390 |
Comparison of Depth Profiling of 10B in Silicon Using Spreading | 409 |
Its Methodology and Application | 429 |
The Annealing and Low Temperature Aging Characteristics of Fine | 458 |
Capacitive Microphone Tuning of UltrasonicThermosonic | 472 |
Dry Etching Using NF3Ar and NF3He Plasmasjohn barkanic | 110 |
EdgeControlled SelfConsistent Proximity Effect Corrections | 124 |
The Effect of Wafer Flatness on Yield by OffLine Computer | 143 |
Forms of Contamination Affecting Device Processing | 163 |
Problems Associated with Submicrometre Contaminant | 172 |
PointofUse Ultrafiltration of Deionized Rinse Water and Effects | 184 |
The Effects of Wafer Thermal History on the 450 C Thermal Donor | 201 |
Interaction Between Point Defects and Oxygen in Silicon | 219 |
Effects of Oxygen on ProcessInduced Defects and Gettering | 230 |
Precipitation Behavior of Deposited Metals in CzSilicon | 241 |
Evaluation of Gettering Efficiency of Backside Damage by the Use | 257 |
Extrinsic Gettering Via the Controlled Introduction of Misfit | 272 |
The Effect of SiSi02 Interface on the Excess Point Defect | 283 |
Fracture Tracing in Semiconductor Waferslawrence d dyer | 297 |
A Preferential Etch for Silicon Crystalsk h yang | 309 |
Oxygen Determination in Silicon Using Fourier Transform Infrared | 320 |
Influence of Electrically Active Impurities on IR Measurements | 335 |
The Effects of Instrumental Artifacts on the Quantitative | 343 |
A Comparative Study of the Mechanical Properties of Bonding | 485 |
New Applications of Tape Bonding for High Lead Count Devices | 500 |
Bumped Tape Processing and Applicationfrank a lindberg | 512 |
Production and Development of Neutron Transmutation Doped | 532 |
Production of DetectorGrade Silicon by Neutron Transmutation | 546 |
Neutron Transmutation Doping in Hydrogenated Amorphous | 558 |
Effects of Hydrogen on Defects in Neutron Irradiated Silicon | 566 |
Neutron Transmutation Doping of SemiInsulating Czochralski | 575 |
Ion Channeling Study of Damage in Neutron Transmutation Doped | 587 |
A New Silicon Irradiation Facility in the PLUTO MTR at Harwell | 595 |
Equalization of Axial Neutron Flux Density for the Transmutation | 605 |
Potential for LargeDiameter NTD Silicon Production in | 615 |
Advanced Test Reactor NTD Silicon Production Hardware | 628 |
Appendix IPanel Discussions | 645 |
Appendix IIWorkshop Sessions | 654 |
| 665 | |
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Common terms and phrases
aluminum angle annealing Applied ASTM ball base beam bonding boron calculated calibration carrier chip concentration contamination crystal curve damage decrease defects density depends depth determined device diameter diffusion discussed dislocations distribution donor dopant doping dose effect electrical electron energy etch experimental experiments facility Figure function gettering gold implant impurity increase International irradiation layer lead manufacturing material measurements mechanical metal method neutron observed obtained operating oxide oxygen particles phosphorus Physics position precipitation present probe problem production properties range reactor REFERENCE region resistivity sample Semiconductor shear shown shows silicon SIMS simulation Society specimen spreading resistance standard strength structure substrate surface Table technique Technology temperature thermal thickness tion tool values various wafer wire yield zone