MOSFET Modeling & BSIM3 Userís Guide
Springer Science & Business Media, Sep 30, 1999 - Technology & Engineering - 461 pages
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools.
In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3.
MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters.
It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model.
MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction.
This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3.
MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
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Appendix A BSIM3v3 Parameter Table 409
Significant Physical Effects In Modern MOSFETs
Threshold Voltage Model
Substrate Current Model 211
Nonquasi Static NQS Model
BSIM3v3 Model Implementation
Model Parameter Extraction
B BSIM3v3 Model Equations
Noise model equations
Enhancements and Changes in BSIM3v3 1 versus
Temperature Dependence Model
Enhancements and Changes in BSIM3v3 2 versus
analog circuit Berkeley bias dependence body bias BSIM3v3 model calculated capacitance model capMod=0 carrier channel charge channel length channel MOSFETs channel width characteristics charge density charge partition Cheng circuit design circuit simulation coefficient depletion charge depletion region diode model discussed doping concentration drain current drain voltage electric field flicker noise gate bias gate oxide gate voltage given in Eq I-V model IEDM Tech IEEE IEEE Trans IGFET impact ionization Integrated Circuits inversion charge inversion layer junction capacitance long channel device model parameters MOS transistor MOSFET model n-channel narrow width effect noise power density NQS model overlap capacitance oxide thickness parameter extraction physical polysilicon saturation region semiconductor short channel effects shown in Fig Solid-State Electronics source and drain SPICE strong inversion region subthreshold region surface potential temperature dependence thermal noise threshold voltage tion Vdsat VLSI Wdrawn weak inversion Weff zero