Laser Processing and Diagnostics (II): 1986 : XI : June 17th-20th, 1986, Strasbourg (France)Dieter Bäuerle, Karl L. Kompa, Lucien D. Laude |
Contents
N MOTT Oxidation of silicon | 3 |
H VACH J HÄGER C FLYTZANIS and H WALTHER Laser investi | 27 |
J EHRLICH Early applications of laser direct patterning | 49 |
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a-Ga absorbed absorption amorphous Appl atoms B-Ga Bäuerle Cedex Centre National d'Etudes chemical chemical vapor deposition CO₂ CO2 laser crystal D.J. Ehrlich d'Etudes des Télécommuni decomposition dependence deposition rate diffusion direct writing electron energy density equation etching rate evaporation excimer excimer laser excited experimental Figure fluence flux formation GaAs Grenoble heat increase induced intensity interaction interface kinetics Laboratoire lamp Lannion laser beam laser irradiation laser power laser pulses laser radiation laser-induced LCVD Lett material mbar measured melting metal molecules Ni(CO nitride observed obtained optical oxidation oxygen parameters Parc de Saurupt particles phase photochemical photochemistry photodeposition photon Phys Physique plasma power density pressure pulsed laser pyrolytic quenching reaction rotational sample scanning scattering Schottky diodes semiconductors SiH4 silane silicon solid solution spectra structure substrate surface temperature techniques thermal thermochemical thickness thin film threshold Torr Université velocity wavelength width zone