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A-parameters admittance alloy amplifier applied atoms base resistance biased breakdown voltage calculation capacity characteristics circuit of Fig coefficient collector current collector voltage collector-base common-base connexion common-base transistor common-collector connexion common-emitter connexion common-emitter transistor compensation condition constant crystal current gain cut-off decreases diffusion diode effect electrons elements emitter current Engrs equilibrium temperature gb'c gb'e germanium high frequencies high-frequency holes impurity increases input impedance input resistance internal feedback junction transistors limiting curve load resistance low frequencies low-frequency maximum gain measurement minority carriers modes of connexion n-region n-type natural equivalent neutralizing circuit noise figure obtained open-circuited operation output impedance output resistance parameters photodiode pnp transistor point-contact transistor power dissipated power gain push-pull ratio recombination rectifier region reverse current reverse power reverse voltage saturation current semiconductor shown in Fig signal silicon sistor stability factor thermal runaway tran two-port valve variation voltage gain zero