Atomic Layer Growth and Processing:, Volume 222

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Y. Aoyagi, P. D. Dapkus, T. F. Kuech
Materials Research Society, Oct 11, 1991 - Technology & Engineering - 359 pages
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Featuring 46 papers from the 1991 MRS Spring Meeting (April 29 - May 3, Anaheim, California), this volume focuses on the technologically challenging field of atomic layer growth and processing. The concept of atomic layer based processing is perhaps a primary road to both the degree of control and processing uniformity for both etching and deposition that the future demands of the semiconductor industry require. Research areas covered include: mechanistic studies of atomic layer processes; characterization of atomic layer processes; III-V semiconductor studies; group IV semiconductor studies; II-VI semiconductor studies; high Tc superconductors and other materials.

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Contents

SURFACE CHEMISTRY AND MECHANISM OF ATOMIC LAYER GROWTH
3
THE SURFACE CHEMISTRY OF GaAs ATOMIC LAYER EPITAXY
15
THE MECHANISMS AND KINETICS OF SURFACE REACTIONS
25
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