Gallium arsenide: proceedings of the second conference on Physics and Technology of GaAs and other III-V Semiconductors, held in Budapest, Hungary, September 8-11, 1986

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Trans Tech Publications, Oct 1, 1987 - Science - 366 pages
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Contents

The preparation and analysis of active layers prepared by Si+ through SI3N4
1
Vanadiumdoped bulk and epitaxial GaAs studied by photoluminescence
7
The use of anisotropically etched gallium arsenide surfaces in optoelectronics
13
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