Optoelectronic Modulators for Optical InterconnectsStanford University, 2005 - 252 pages |
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Page 48
... absorption coefficient of the MQW region can be calculated [ 1 ] . Then adjustments to the refractive index of the MQW region are derived via the Kramers - Kronig relations . These steps result in data of the effective absorption ...
... absorption coefficient of the MQW region can be calculated [ 1 ] . Then adjustments to the refractive index of the MQW region are derived via the Kramers - Kronig relations . These steps result in data of the effective absorption ...
Page 59
... absorption coefficient . The absorption coefficient of an InGaAsP / InP quantum well is generally about 3 times lower than that of equivalent AlGaAs / GaAs quantum well . ( Recent developments in the GaInNAs ( Sb ) / GaAs system may ...
... absorption coefficient . The absorption coefficient of an InGaAsP / InP quantum well is generally about 3 times lower than that of equivalent AlGaAs / GaAs quantum well . ( Recent developments in the GaInNAs ( Sb ) / GaAs system may ...
Page 60
Noah Charles Helman. The problem of a relatively low absorption coefficient is essentially what necessitates the use of the AFPM concept in the first place . The fact that the absorption coefficient of InGaAsP is 3 times lower than ...
Noah Charles Helman. The problem of a relatively low absorption coefficient is essentially what necessitates the use of the AFPM concept in the first place . The fact that the absorption coefficient of InGaAsP is 3 times lower than ...
Contents
Optical Interconnects | 5 |
Transmitter Devices for Optical Interconnects 2220 | 20 |
Conclusions | 26 |
Copyright | |
2 other sections not shown
Common terms and phrases
2D arrays absorption coefficient achieve AFPM Agarwal AlGaAs modulators AlGaAs/GaAs alignment angled mirrors B. E. Nelson beam bit rate carrier wave cavity tuning Chapter CMOS CMOS chip contrast ratio D. A. B. Miller Debaes electric field electrical interconnects electroabsorption modulators epitaxial epoxy etch exciton fabricated Fabry-Perot fiber flip-chip bonding frequency G. A. Keeler GaAs Gaussian beam Gbps high contrast ratio IEEE Journal IEEE Photonics Technology incident angle InGaAsP insertion loss integration J. S. Harris Journal of Selected laser layer Lithography low voltage drive misalignment tolerance modelocked MQW region N. C. Helman operate optical interconnects optical system optoelectronic devices optoelectronic modulators optoelectronic transmitter p-contact p-i-n diode Photonics Technology Letters photoresist power consumption QCSE Quantum Electronics refractive index requirements Selected Topics semiconductor signal silicon CMOS simulation structure surface-normal modulator technique thickness Thienpont Topics in Quantum transmitter device V-grooves VCSELS wafer waveguide wide wavelength range