Solid State Circuits, 1976: Seven Invited Papers Presented at the Second European Solid State Circuits Conference (ESSCIRC) Held at the University of Toulouse, Septembre 21-24, 1976 |
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Common terms and phrases
and-array anisotropic array logic bulk silicon Calculated carrier channel length chip area circuitry CMOS complexity curve decoder density depletion dimensions diodes doping dynamic effect electron beam electron mobility epitaxial ESSCIRC etching exposure fabrication field-effect transistors film thickness function GaAs gate Gunn high speed IEEE implement improvement increase input integrated circuits interface inverter ion implantation ISSCC layer leakage current Lett level shifter lift-off lines linewidth logic circuits mask and wafer minimum MOS transistor MOS/SOS MOSFET MOSFET technologies n-type number of bits obtained or-array oscillator oxidation parameters parasitic capacitances pattern definition performance photoresist Phys power consumption profiles pulse quartz quartz oscillator reduced resist resistor sapphire technology Schottky Schottky diode semi-insulating shadow printing shown in figure shows Si/sapphire silicon films silicon on sapphire SiO2 Solid State Circuits structure substrate switch techniques Technol temperature threshold voltage transconductance variables Vittoz width