MOSFET MODELING FOR VLSI SIMULATION: Theory and Practice (Google eBook)

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World Scientific, Jan 1, 2007 - Integrated circuits - 605 pages
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A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required.
  

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Contents

Overview
1
Review of Basic Semiconductor and pn Junction Theory
15
MOS Transistor Structure and Operation
69
MOS Capacitor
121
Threshold Voltage
167
MOSFET DC Model
230
Dynamic Model
325
Modeling HotCarrier Effects
366
Data Acquisition and Model Parameter Measurements
402
Model Parameter Extraction Using Optimization Method
501
SPICE Diode and MOSFET Models and Their Parameters
536
Statistical Modeling and WorstCase Design Parameters
563
Appendix A Important Properties of Silicon Silicon Dioxide and Silicon
580
Appendix G Linear Regression
587
List of Widely Used Statistical Package Programs
599
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Page 13 - General optimization and extraction of 1C device model parameters', IEEE Trans.
Page 2 - LOGIC <a) 1960 1970 1980 1990 10 2000 Fig. 1.1 (a) Exponential growth of the number of components on the chip (SSI = small-scale integration; MSI = medium-scale integration; LSI = large-scale integration; VLSI = very large-scale integration); (b) Exponential decrease of the minimum device dimensions. Dotted lines are projections. (From Sze [4, p. 3], slightly modified) Unfortunately not all device parameters can be scaled proportionately. These limits on scaling have increased the importance of device...

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