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Long wavelength vertical cavity light-emitting devices

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Cornell University, Aug., 1997 - Technology & Engineering - 284 pages

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Contents

Tunable LED Fabrication
31
Tunable LED Measurement Results
68
Tunable LED Theoretical Results
89

2 other sections not shown

Common terms and phrases

acetone active layer active region air gap thickness AlGaAs Appl applications applied voltage bonded interface bottom mirror cantilever beams cavity length contact pad curve DBR mirror decreasing deposited dielectric mirror distributed Bragg reflectors Electron emission wavelength epitaxial epitaxial layers etch holes evaporated exposed fabrication process GaAs substrate GaAs-based mirror gain grown hysteresis IEEE Photon increase InGaAs InGaAsP lasing Lett linewidth lithography long wavelength loss mesa metal microns mirror reflectivity mode MQW region multiple quantum n-type optical aperture optical fiber optical spectrum analyzer output wavelength oxidation oxide-confined VCSEL oxygen plasma patterned photoresist Photoresist is spun Phys polyimide refractive refractive index released membrane Schematic illustration semiconductor shown in figure silicon silicon dioxide SiO2 stop band strain strain-compensated surface micromachining surface-emitting lasers suspended membrane thermal threshold current top mirror transmitter tunable LED tuning range VCSEL structure vertical cavity lasers vertical-cavity wafer bonding wavelength stabilization wavelength tunable wavelength tuning

Bibliographic information

QR code for Long wavelength vertical cavity light-emitting devices
TitleLong wavelength vertical cavity light-emitting devices
AuthorGina Lee Christenson
PublisherCornell University, Aug., 1997
Original fromCornell University
DigitizedNov 29, 2010
Length284 pages
Subjects › 

Lasers
Light emitting diodes
Technology & Engineering / Lasers & Photonics
Tunable lasers
  
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