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Swirl Defects in Silicon Crystals Invited J Chikawa and S Shirai 153
HighResolution XRay Emission Studies of Atomic and Molecular Gases
202 other sections not shown
absorption activation energy alloys amorphous anisotropy annealing anode anthracene Appl applied atoms band beam calculated carrier concentration cell characteristics charge coefficient constant curve decrease density differential resistance diffraction diffusion diffusion pump diode dislocation distribution effect electric field electron emission energy epitaxial equation etch experiment experimental results Figure film frequency function GaAs growth implanted increase injection intensity ion pump ionization irradiation laser lattice layer Lett linear liquid magnetic field Manganin measured method observed obtained optical output oxidation p-n junction parameter peak phosphorus photoluminescence photon Phys plasma pressure Proc pulse pump ratio refractive index region resonant respectively room temperature sample saturated absorption scattering semiconductor shown in Fig shows silicon single crystal solid spectra spectrum stripe substrate surface temperature dependence theoretical thermal thickness threshold tion tokamak Torr traps vacuum valence band velocity voltage wafers wave wavelength width X-ray