A Study of Current Crowding in Bipolar Transistors |
From inside the book
Results 1-3 of 9
Page 82
... equation - ( ai bL = dx iso we L ( di dx di e } - Eg ] / K [ TA T + R α th dx L ' di e { Vcc ̄ -r } ] CC C dx L ... differential equation . The solution of the terminal properties of the device at the onset of thermal instability does ...
... equation - ( ai bL = dx iso we L ( di dx di e } - Eg ] / K [ TA T + R α th dx L ' di e { Vcc ̄ -r } ] CC C dx L ... differential equation . The solution of the terminal properties of the device at the onset of thermal instability does ...
Page 115
... equation ) . An attrac- tive feature of this method is that it is applicable to nonlinear problems for which ... differential equation but not the boundary conditions . 2 . The terms may satisfy the boundary conditions but not the ...
... equation ) . An attrac- tive feature of this method is that it is applicable to nonlinear problems for which ... differential equation but not the boundary conditions . 2 . The terms may satisfy the boundary conditions but not the ...
Page 118
... differential equation to a set of ordinary differential equations . In some cases greater accuracy is possible if the domain is divided into several subdomains and different forms of the solution u ( x , t ) are assumed in the different ...
... differential equation to a set of ordinary differential equations . In some cases greater accuracy is possible if the domain is divided into several subdomains and different forms of the solution u ( x , t ) are assumed in the different ...
Common terms and phrases
approximate solution assumed base contact base current breakdown Base voltage distribution base-emitter boundary conditions breakdown voltage BV cbo c₂ charging current density collector current collector multiplication common emitter conduction current density constant crowding studies current crowding current distribution depletion region depletion region capacitances di/dx different values differential equation diffused collector diffusion capacitance diffusion equation diode distribution for different effective emitter length emitter base junction emitter crowding emitter junction emitter resistance equivalent circuit etch Ghosh Hence high current increase initial condition integration minority carrier numerical integration onset of thermal open base breakdown p-n-p transistor plot qIbLb qVb/kT reduces reverse base current saturation current Schottky collectors second period shown in Fig silicon groove single point collocation steady state value subdivided collector subdomains t₁ temperature terminal base current thermal instability transient Transistor geometry V₁ V₁(t V₂ yields zero кт сс