Computational Single-Electronics

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Springer Science & Business Media, Jun 29, 2001 - Computers - 278 pages
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Single-electronics is a fascinating technology which reveals new physical effects of charge transport. It has many benefits and great figure of merits but also several open challenges waiting for elegant solutions . In my almost o- decade-long involvement in single-electronics I have seen a steady rise in interest measurable in the number of published articles, conference talks, and research grants from government and industry . In order to collect , categorize, and summarize a good part of this body of knowledge as well as to introduce some new points of view, variations , and extensions, I set out to write this book. A book targeted at the student eager to delve into single-electronics as well as the expert who needs a reference for theory, circuits, and algorithms for system analyses. This book addresses three areas : the theory which goes beyond the orthodox theory, the computational methods necessary to analyze sing- electron circuits, and applications and manufacturing methods, the practical side of single-electronics. The theory was kept short and concise, suitable for people seeking a compact introduction or reference . For in-depth coverage one has to consult cited articles and books. The computational part is very complete and can be considered state of the art for single-electronics . Almost all algorithms which are necessary for a successful and efficient implemen- tion are stated . Not all of them are exhaustively explained but at least a recipe for their successful implementation is given .
  

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awesome..................book for people who work on SET devices.

Contents

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V
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VI
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VIII
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LXX
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Copyright

Common terms and phrases

Popular passages

Page 270 - VI Talyanskii, JM Shilton, M. Pepper, CG Smith, CJB Ford, EH Linfield, DA Ritchie, and GAC Jones, "Single-electron transport in a one-dimensional channel by high-frequency surface acoustic waves,
Page 258 - H. Grabert and MH Devoret, eds., Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures, Plenum Press, New York, 1992.
Page 270 - N. Takahashi, H. Ishikuro, and T. Hiramoto, "A Directional Current Switch Using Silicon Single Electron Transistors Controlled by Charge Injection into Silicon Nano-Crystal Floating Dots,
Page 267 - T. Futatsugi, K. Kosemura, T. Fukano and N. Yokoyama, "Room temperature operation of Si single-electron memory with self-aligned floating dot gate,
Page 269 - Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals", J. Appl. Phys., 84.
Page 270 - GL Snider. AO Orlov, I. Amlani. GH Bernstein, CS Lent, JL Merz, and W. Porod, Experimental demonstration of quantum-dot cellular automata.
Page 263 - L. Guo, E. Leobandung, and SY Chou, A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultra narrow channel,^/.

References to this book