The Behaviour of the Metal-oxide-semiconductor Field-effect Transistor in the Triode Region |
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Page 3
... + + + Ec Ef E VGO +++ 1 . Ес ++ Ef Ei Metal Oxide n - type Bulk Metal Oxide Bulk n - type Bulk Accumulation of majority carriers near surface Depletion of majority carriers from surface Inversion layer of minority carriers 3.
... + + + Ec Ef E VGO +++ 1 . Ес ++ Ef Ei Metal Oxide n - type Bulk Metal Oxide Bulk n - type Bulk Accumulation of majority carriers near surface Depletion of majority carriers from surface Inversion layer of minority carriers 3.
Page 4
... minority carriers - holes - will be attracted to the interface . When the minority carrier density at the surface equals or exceeds the majority carrier bulk density , an inversion layer of minority carriers is formed at the surface ...
... minority carriers - holes - will be attracted to the interface . When the minority carrier density at the surface equals or exceeds the majority carrier bulk density , an inversion layer of minority carriers is formed at the surface ...
Page 8
... carrier generation and recombination of minority carriers is quite slow and the capacitance due to these will depend on the frequency of the measurement . It is very interesting to study Eq . 1.6 to see the effect of the bias voltage on ...
... carrier generation and recombination of minority carriers is quite slow and the capacitance due to these will depend on the frequency of the measurement . It is very interesting to study Eq . 1.6 to see the effect of the bias voltage on ...
Common terms and phrases
200 Micromho/Volt assumed carrier mobility channel constant mobility theory defined donor ions doping drain bias voltage drain conductance drain current drain junction drain saturation voltage drift field dv/dy electric field Electron Devices energy band diagram equations evaluated Experiment Predicted experimental FIELD-EFFECT TRANSISTOR gate bias given by Eq given drain bias Hall measurements Hofstein hole mobility IEEE IEEE Trans interface low gate voltages majority carriers metal electrode Milliamps mobility of carriers MOS capacitance MOS structure MOS system MOS transistor n-type Silicon normalized surface potential Øms oxide p-channel enhancement type plot Qss/Co Qtot saturation current semiconductor shown in Fig silicon dioxide substrate surface inversion layer surface mobility surface state density Texas Instruments thermal threshold voltage Trans on Electron transconductance transverse surface field triode region Unit V₂ variation VG G VG Volts voltage and surface Volts/cm ва