Fabrication and Microwave Performance of an (AlGa) As/GaAs Heterojunction Bipolar Transistor |
Contents
BASIC THEORY | 12 |
EPITAXIAL GROWTH OF HBT DEVICE LAYERS | 57 |
TRANSISTOR PROCESSING | 66 |
1 other sections not shown
Common terms and phrases
abrupt AlGa AlGaAs alloy cycle aluminum Ankri annealing Asbeck band gap base region base transit base-collector beryllium beryllium implant bias conditions boron built-in potential capacitance cm² collector current common emitter current conduction band current density cutoff frequency DC current gain decrease depletion region device diffusion doping concentration doping level effect Elec electron current electron injection electrostatic potential emitter base emitter current gain emitter doping emitter-base interface epilayers Epitaxial Structure Equivalent Circuit etch expression external base resistance fabrication fmax frequency of oscillation function of frequency GaAs gain and common grading interfaces grading layer heterojunction bipolar transistor holes homojunction injected electron injection efficiency ion implantation junction capacitance Kroemer mesa microwave performance N-AlGaAs ohmic contacts p-n junction p-type parasitic photolithography Phys processing recombination current series resistance sheet resistance specific contact resistance spike substrate temperatures thickness Unilateral gain velocity voltage ΔΕ Δεν