Semiconductor Particle Detectors |
Contents
DIFFUSED JUNCTION TYPE | 4 |
BULK SEMICONDUCTOR Detectors | 31 |
BARRIER LAYERS AND THEIR PROPERTIES | 48 |
Copyright | |
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a-particles acceptor ambient temperatures amplifier applied bias approximately atoms back contact barrier depth barrier layer counters boron bulk counters capacitance carrier concentration carrier lifetime cent charged particles collection conduction band constant Counts per channel crystal counters dark current dE/dx Dearnaley depends depletion zone detection donor doped electric field electrons energy gap energy levels energy resolution excess carriers factor Fermi level flicker noise forbidden zone germanium give gold high resistivity holes illustrated in Figure impurity concentration increase Inst intrinsic semiconductor ionization junction counter junction detectors linearity material method minority carrier mobility neutrons Nuclear Particle Detectors obtained ohmic contacts operate P-N junction P-type silicon Particle Detectors peak Phys problem properties protons pulse height radiation Radio Engrs recombination reduced region reverse bias reverse current semiconductor detectors Semiconductor Nuclear Particle silicon SILICON BULK DETECTOR space charge trapping spectrum surface barrier detectors thermal valence band