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Metal Organic Vapour Phase Epitaxy
A study of the growth mechanisms of epitaxial GaAs as grown
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A/sec activation energy aluminium ambient arsenic arsine AsH3 atoms bandgap boundary layer calculated carbon carrier gas component composition concentration Cryst crystal growth decomposition decrease defects diffusion dimer discussed dislocations electron epilayer epitaxial growth epitaxial layers epitaxial structures free convection Ga(As,P GaAs substrate GaAs0 gallium arsenide gallium phosphide GaP layers gas flow gas phase Growth 68 Growth 77 growth mechanism growth rate growth temperature horizontal reactor hydrides hydrogen III-V impurity incorporation interfaces lattice constant layers grown luminescence M.R.Leys materials melt metal organic compounds Metal Organic Vapour methyl groups misfit Molecular Beam Epitaxy molecules MOVPE observed obtained Organic Vapour Phase partial pressure particles PH3 to TMGa PH3/TMGa ratio phonon phosphine photoluminescence Phys PL peak present pyrolysis reaction reactor tube region samples shown species strained layers studies substrate substrate surface superlattice susceptor susceptor temperature takes place technique TMA1 TMGa ratio transition trimethylaluminium trimethylgallium Vapour Phase Epitaxy