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Theory of Operation
Equivalent Circuit Modeling
4 other sections not shown
achieved Appl applied bias approximation band diagram bandgap bias points bipolar transistors calculated Chapter collector conduction band constant contact resistance current density current-voltage curve depletion layer device capacitance device design device dimensions device speed device switching differential resistance region doping double barrier structure E.R. Brown electrons emitter epitaxial equation equivalent circuit Esaki diodes fabricated Fermi figures of merit frequency function GaAs growth HBT's high speed IEEE impedance increased Lett load line measured micron microwave compatible molecular beam epitaxy monolayers negative differential resistance negative resistance ohmic contact optical oscillations output Phys pulse forming circuits pulse forming structures reduced resonant tunneling devices resonant tunneling diodes resonant tunneling transistor risetime room temperature RTD's RTT's S-parameter scattering parameters series resistance shown in Fig significantly small signal spacer layer substrate T.C.L.G. Sollner thickness transconductance transit transmission coefficient transmission line typical valley current voltage W.D. Goodhue wafer waveform width