## Physics of the large-signal response of short-channel MESFET's |

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1/2 ym gate accumulation regions areas denote electron bias levels boundary conditions capacitor circuit model circuit simulation cm/sec conjugate gradients continuity equation contours during gate CUPID current continuity equation current density current source denote electron velocities diffusivity diode discrete Poisson equation drain current drain voltage electric field equipotential contours equivalent circuit experimental fanout Field Effect Transistor Five-point stencil GaAs device GaAs MESFET's gate capacitance gate GaAs MESFET gate length gate pulse transient gate Si MESFET gate voltage half-micron gate iterative kV/cm large signal logic gate MESFET inverters MESFET simulation mesh spacing MLAT mobile carriers mobile charge contours Neumann boundary conditions nonlinear number of unknowns one-micron gate percent of doping pF/cm picoseconds Poisson's equation potential power dissipation pSec pulse transient response Schottky barrier Schottky diode semiconductors shown in Figure silicon and GaAs solution solve Poisson's equation substrate switching transconductance transistor turn-off volts weighting matrix ym gate GaAs