Physics of the Large-signal Response of Short-channel MESFET's |
Common terms and phrases
1/2 um gate areas denote electron bias levels boundary conditions capacitance capacitor cm/sec conjugate gradients continuity equation contours during gate CUPID current continuity equation current density current source denote electron velocities diode discrete Poisson equation doping density 1017 drain current drain voltage electric field equipotential contours fanout FET's Field Effect Transistor Five-point stencil GaAs MESFET's gate capacitance gate GaAs MESFET gate length gate pulse transient gate Si MESFET gate voltage grid half-micron kV/cm Laplacian operator logic gate MESFET inverters mesh spacing MLAT mobile carriers mobile charge contours negative resistance Neumann boundary conditions Newton's method non-zero elements nonlinear number of unknowns one-micron gate output voltage overrelaxation parameters percent of doping pF/cm picoseconds pSec 4 pSec pulse transient response Schottky barrier semiconductors sequence of mobile silicon and GaAs solution solve Poisson's equation source pad substrate switching transconductance transient of 1/2 transistor volts weighting matrix X X X εε