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alloy anode Appl atomic band barrier height barrier thickness bias voltage calculation cathode chapter circuit models conventional MBE growth current-voltage characteristic cutoff frequency decay device design device performance double barrier structure effective mass electron mobility energy equation Esaki etching finger structure GaAs grown growth interruption growth mode growth rate I-V characteristics IEEE InAlAs InAs)m(AlAs)m SPS InGaAs InP Substrate interface interfacial quality ion milling L.F. Eastman laser layer structure layer thickness Lett measured molecular beam epitaxy monolayer ohmic contact optical parasitic peak current density peak-to-valley current ratio phonon photoluminescence Phys planar quantum quasibound Raman resonant tunneling device resonant tunneling diode RHEED RHEED oscillation RHEED pattern rL rR room temperature RTDs samples self-aligned series resistance short period superlattices shown in figure SPSs streak camera structure parameters superlattice surface technique thermal emission current thesis transmission probability tunneling current tunneling probability valley current Vappl wafers width