Growth- and Processing-induced Defects in Semiconductors |
Contents
GROWTH AND PROCESSINGINDUCED DEFECTS | 2 |
BEHAVIOR OF OXYGEN IN CZOCHRALSKI SILICON | 25 |
DEFECTS IN EPITAXIAL LAYERS | 39 |
Copyright | |
4 other sections not shown
Common terms and phrases
A. G. Evans alloys amorphous annealing appl atoms behavior Burgers vectors ceramics clusters component composite concentration creep crystal crystalline debonding deformation density diffraction diffusion dislocations distribution dopant ductility elongation energy enhanced epitaxial EXAFS fiber fine-grained formation fracture GaAs glass grain boundary grain boundary sliding grain growth growth Headington Hill Hall hydrogen increase interface lattice layer Lett MAHAJAN martensitic Materials Science matrix cracking mechanisms melt microcrack micrograph microstructure misfit modulus monoclinic nanocrystalline materials nanocrystalline Pd nucleation O. D. SHERBY observed oxidation oxygen parameter Pergamon Press phase Phys plane plastic point defects polycrystalline positron powders precipitates properties regions Rühle samples SAN DIEGO Schematic Section semiconductors shown in Fig silicon sintering solid solution specimen stacking faults strain rate strain-rate-sensitivity exponent structure substrate superplastic flow superplastic forming superplastic materials surface temperature tensile TiO2 toughening toughness transformation transmission electron microscopy vacancies volume X-ray zone