Introduction to MicrolithographyL. F. Thompson, C. Grant Willson, M. J. Bowden Updated and expanded! Reviews the theory, materials, and processes that are used in the lithographic process. Opens with a brief historical introduction to the advances in microlithography. Discusses four major topics: the physics of the lithographic process, organic resist materials, resist processing, and plasma etching. Designed as a tutorial for researchers with no experience in the field, as well as those experienced in microlithography. Will also prove invaluable to those already involved in microlithography. Includes numerous references for more detailed reading on specific aspects of microlithography. |
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Page 242
... Exposure " fixes " the additive in the exposed areas , and then after exposure the additive is removed from the unexposed areas by baking ( usually in vacuo ) to produce a pattern of additive in the matrix . The challenge of this ...
... Exposure " fixes " the additive in the exposed areas , and then after exposure the additive is removed from the unexposed areas by baking ( usually in vacuo ) to produce a pattern of additive in the matrix . The challenge of this ...
Page 279
... exposed resist . For resist sensitivity com- parisons , the developer is determined by starting with a solvent system that dissolves the unexposed film and diluting this solvent with a nonsol- vent ( water in the case of aqueous systems ) ...
... exposed resist . For resist sensitivity com- parisons , the developer is determined by starting with a solvent system that dissolves the unexposed film and diluting this solvent with a nonsol- vent ( water in the case of aqueous systems ) ...
Page 358
... exposed by a conventional UV tool and developed as appropriate . The top imaging layer was designed to be opaque to short - wavelength UV ( 230-250 - nm ) light and subsequently used as a mask to the flood exposure from a high ...
... exposed by a conventional UV tool and developed as appropriate . The top imaging layer was designed to be opaque to short - wavelength UV ( 230-250 - nm ) light and subsequently used as a mask to the flood exposure from a high ...
Contents
The Physics | 19 |
Organic Resist Materials | 139 |
Resist Processing | 269 |
Copyright | |
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absorbed acid anisotropic Appl atoms backscattered beam chemically amplified chemistry circuit Cl₂ coating coherence contamination cross-linking deep-UV defects density device dose dry etching e-beam effect electron electron-beam emission energy entrance pupil equation etch rate etchant exposed film thickness Fourier Fraunhofer diffraction function glow discharge increase Instrum integrated circuit intensity ion bombardment laser lens line width lithography mask models molecular weight molecules negative resist novolac optical oxide parameters permission from reference Photo-Opt photolithography photoresist Phys planarizing layer plasma etching plasma reactor PMMA polymer prebaking Proc produce projection radiation reaction reactive reactive ion etching resin resist film resist material resist systems resolution scanning scattering semiconductor shown in Figure silicon slit Solid State Technol solubility solvent spatial frequency species spin-coating step substrate surface techniques temperature thermal tion unexposed wafer wavelength Willson X-ray X-ray lithography