G E Transistor Manual1962 - Transistors - 440 pages |
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Page 227
... ( ICBO is excessive ) , equal to , or greater than the required test BVCвo voltage ( ICвo is less than the allowed ... ICBO TEST CIRCUIT Figure 15.15 VSOURCE + VT VTEST ITEST R GO - NO GO ICBO TEST CIRCUIT Figure 15.16 CLAMP VOLTAGE LARGE ...
... ( ICBO is excessive ) , equal to , or greater than the required test BVCвo voltage ( ICвo is less than the allowed ... ICBO TEST CIRCUIT Figure 15.15 VSOURCE + VT VTEST ITEST R GO - NO GO ICBO TEST CIRCUIT Figure 15.16 CLAMP VOLTAGE LARGE ...
Page 314
... ICBO AT 30V % FAILURE RATE / 1000 HOURS 20 60 N 2N335 FAMILY PRODUCTION PERIOD 1959 , 1960 CYCLED LIFE PW - 500 MW Vc = 30V TA = 25 ° C SAMPLE SIZE 2695 UNITS INITIAL LIMITS : END LIFE ICBO at 30V Iμ a MAX . ht at VCE = 5V IE = IMA 4μa ...
... ICBO AT 30V % FAILURE RATE / 1000 HOURS 20 60 N 2N335 FAMILY PRODUCTION PERIOD 1959 , 1960 CYCLED LIFE PW - 500 MW Vc = 30V TA = 25 ° C SAMPLE SIZE 2695 UNITS INITIAL LIMITS : END LIFE ICBO at 30V Iμ a MAX . ht at VCE = 5V IE = IMA 4μa ...
Page 328
... ICBO is the most common source of failures ; but as can be seen from the medians , the bulk of the distribu- tions are remaining constant or even decreasing their leakage current . % FAILURE RATE / 1000 HOURS B % FAILURE RATE / 1000 ...
... ICBO is the most common source of failures ; but as can be seen from the medians , the bulk of the distribu- tions are remaining constant or even decreasing their leakage current . % FAILURE RATE / 1000 HOURS B % FAILURE RATE / 1000 ...
Contents
Space Charge Neutrality | 8 |
Grown Junction Transistors | 20 |
THE TRANSISTOR SPECIFICATION SHEET | 30 |
Copyright | |
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Common terms and phrases
ambient temperature amplifier anode applied AUDIO base current bias breakdown voltage BVCE capacitance capacitor characteristics charge circuit of Figure collector current collector to emitter collector voltage common collector common emitter current gain cycle decrease device diffused diode distortion electrical electrons emitter current equations failure rate feedback flip-flop forward current frequency gate germanium ICBO increase input impedance interbase JEDEC junction temperature leakage current load maximum measurement MESA TRANSISTOR negative negative resistance noise NPN transistor operation oscillator output stage parameters power dissipation power gain power output preamplifier pulse R₁ R₂ region reliability resistance resistor reverse biased run-away saturation semiconductor shown in Figure signal silicon specified speed square wave stability switch thermal trigger TYPICAL unijunction transistor V₁ VCE SAT volts VTVM watts zero