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Displacement Effects in Silicon 270
Interaction of Radiation
8 other sections not shown
absorption annealing approximately average beam bremsstrahlung calculated capture charge transfer charged particles cluster cm3/sec Ref coefficient collisions conduction band Coulomb cross section curve damage constant decreases defect level dependence depletion region device diffusion displacement effects distribution doping dose elastic scattering electric field electron energy electron-hole pair electrons and holes emission emitted energy deposition energy levels energy loss energy transfer equations equilibrium excess carriers excitation Fermi level fluence function gases germanium IEEE IEEE Trans impurities incident particle increase injection level insulators interactions interface interstitial ionization effects ionization potential ionizing radiation irradiation lattice lifetime material measured minority carriers minority-carrier mobility n-type neutral neutron Nucl nuclear nucleus p-n junction photoconductivity photocurrent photons Phys potential primary recoil produce pulse radiation effects range reaction recoil atoms recoil energy recombination center result shown in Figure silicon space-charge surface temperature thermal tion track trapped vacancy valence band velocity voltage