Ferroelectric Thin Films: Basic Properties and Device Physics for Memory ApplicationsMasanori Okuyama, Yoshihiro Ishibashi Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field. |
Contents
I | 3 |
IV | 4 |
V | 5 |
VI | 6 |
VII | 9 |
VIII | 12 |
IX | 14 |
X | 15 |
LXXIII | 128 |
LXXIV | 131 |
LXXV | 134 |
LXXVI | 140 |
LXXVII | 144 |
LXXVIII | 145 |
LXXIX | 147 |
LXXX | 148 |
XIII | 16 |
XIV | 19 |
XV | 20 |
XVI | 25 |
XVII | 26 |
XVIII | 28 |
XIX | 29 |
XXI | 31 |
XXII | 33 |
XXIII | 35 |
XXIV | 36 |
XXV | 39 |
XXVI | 41 |
XXVII | 43 |
XXIX | 45 |
XXX | 46 |
XXXI | 47 |
XXXII | 48 |
XXXIII | 50 |
XXXIV | 54 |
XXXV | 56 |
XXXVI | 59 |
XXXVII | 61 |
XXXVIII | 62 |
XXXIX | 64 |
XL | 67 |
XLI | 71 |
XLIII | 72 |
XLIV | 74 |
XLV | 77 |
XLVI | 78 |
XLVII | 80 |
XLVIII | 83 |
L | 85 |
LI | 86 |
LII | 87 |
LIV | 88 |
LV | 91 |
LVI | 92 |
LVII | 93 |
LVIII | 101 |
LIX | 103 |
LX | 105 |
LXI | 106 |
LXII | 107 |
LXIII | 111 |
LXIV | 112 |
LXVI | 113 |
LXVII | 115 |
LXVIII | 116 |
LXIX | 117 |
LXX | 118 |
LXXI | 123 |
LXXII | 127 |
LXXXI | 149 |
LXXXII | 150 |
LXXXIV | 152 |
LXXXV | 156 |
LXXXVI | 158 |
LXXXVII | 161 |
XCI | 162 |
XCII | 163 |
XCIII | 167 |
XCVI | 168 |
XCVII | 170 |
XCVIII | 172 |
XCIX | 177 |
C | 178 |
CII | 179 |
CIV | 180 |
CV | 181 |
CVII | 183 |
CVIII | 184 |
CIX | 185 |
CXI | 186 |
CXIV | 187 |
CXV | 188 |
CXVII | 191 |
CXIX | 192 |
CXX | 193 |
CXXI | 195 |
CXXII | 196 |
CXXV | 199 |
CXXX | 200 |
CXXXI | 204 |
CXXXII | 206 |
CXXXIII | 208 |
CXXXIV | 210 |
CXXXV | 211 |
CXXXVI | 217 |
CXXXVII | 219 |
CXXXIX | 220 |
CXLI | 222 |
CXLII | 224 |
CXLIII | 225 |
CXLV | 226 |
CXLVI | 227 |
CXLVII | 228 |
CL | 230 |
CLI | 231 |
CLIV | 232 |
CLV | 233 |
CLVI | 234 |
CLVII | 235 |
CLVIII | 236 |
CLIX | 238 |
| 241 | |
Other editions - View all
Ferroelectric Thin Films: Basic Properties and Device Physics for Memory ... Masanori Okuyama,Yoshihiro Ishibashi No preview available - 2005 |
Ferroelectric Thin Films: Basic Properties and Device Physics for Memory ... Masanori Okuyama,Yoshihiro Ishibashi No preview available - 2009 |
Ferroelectric Thin Films: Basic Properties and Device Physics for Memory ... Masanori Okuyama,Yoshihiro Ishibashi No preview available - 2010 |
Common terms and phrases
AFM images Appl applied voltage as-deposited B-site ions BaTiO3 BNT thin films capacitance capacitor coercive field Curie temperature decreases depolarization depolarization field deposition dielectric constant diffraction domain structure domain wall effect electric field electrode epitaxial excimer UV irradiation extrapolation length FeRAMs ferroelectric film ferroelectric layer ferroelectric properties Ferroelectric Thin Films Figure free energy Funakubo growth hysteresis loops insulator layer Intensity arb interface Ishibashi Iwata kV/cm leakage current Lett measured memory retention metal MFIS structure MOCVD nanostructures nm-thick nonlinear dielectric O2 annealing O2-annealed observed obtained Okuyama orientation P-E hysteresis loops PbTiO3 and PZT permittivity perovskite phase transition Phys piezoelectric PZT films PZT thin relaxor behavior remanent polarization retention characteristics rhombohedral SBT film Schottky semiconductor shown in Fig single crystals single-crystal SNDM spontaneous polarization SrRuO3 SrTiO3 substrates superlattices temperature tetragonal thickness thin films prepared Watanabe YMnO3 µC/cm²