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The regenerative process in avalanche transistors
in avalanche transistors
10 other sections not shown
assumed assumptions astable avalanche multiplication avalanche transistor base current base region base side basic equations become forward biased bias currents build-up of current Calc Meas Calc calculated capacitive load capacitor cause the collector Chapter charge of holes charge variables collector depletion layer collector junction collector voltage constant cosh aW current builds current flow current pulse decay decreases delay line density depletion region di/dt diffusion equation diffusion model diffusion transistor electrons emitter junction external circuit external current germanium increase incremental charge incremental stored charge independent of transistor junction to become lector maximum Meas Calc Meas minimum value minority carriers MP holes obtained P-N JUNCTION peak current peak value physical details PNP transistors pulse circuits pulse duration pulse shape qualitatively quantitative regenerative build-up relaxation oscillator resistive load resistor saturation current SERIES RESISTANCE Shockley and Gibbons shown in Fig stored charge concept terminal behavior transient process transistor parameters zero