Advanced Optical Data Storage: 28-29 January 2003, San Jose, California, USA |
Contents
Y2SiOs at 1 5 µm for optical processing memory and laser | 51 |
Effects of the applied field orientation in electrical fixing 498813 | 62 |
SESSION 4 | 68 |
Copyright | |
1 other sections not shown
Common terms and phrases
absorption Appl bandwidth c-axis coherent concentration conduction band Coufal coupling laser crosstalk data layer deeper traps density dephasing detector diffraction efficiency disk domains doped dynamic range effect electric field electrons Er³ erbium experimental Figure film grating holograms holographic correlators Holographic Data Storage holographic memory holographic recording homogeneous linewidth hyperfine increase ions jitter kV/cm Lett lifetime LiNbO3 crystals lithium niobate magnetic field material measured method modulation multiplexing Optical Data Storage optical memory parameters pattern performance phase photon photopolymer photorefractive Phys polarons probe processing Psaltis pulse quantum quantum computing R. L. Cone Rabi frequencies rare earth readout recording beams recording intensities sample sensitizing beam shallower traps signal slice slow light space layer thickness spatial spectral diffusion spectral hole burning stimulated photon echo stopped light substrate temperature thermal transition triple-layered disc two-center recording two-step recording W/cm² wavelength width Zameer