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absorption activation energy adatom alloys amorphous Applied Physics Letters atoms band behavior bond bulk Burgers vector calculated Chen correlation Crystal Growth decreased deduced Defect Annealing dependence donor dopant doping dose effect electrical activity electromigration electron irradiation emission epitaxial experimental films formation function GaAs grain boundaries grain boundary diffusion H diffusion Hgj_xCdxTe impurity increased interaction interdiffusion interface interstitial investigated ion implantation Ionic Conduction Journal of Crystal lattice layer low-energy material measurements mechanism metastable method migration misfit dislocations molecular beam epitaxy n-type n-type single crystal n+-on-n configuration n+-on-p configuration formed nucleation observed optical oxide p-n junction parameters peak phase Philosophical Magazine photoluminescence planar planes Point Defects profiles proton rapid thermal annealing relaxation resonance samples Semiconductors simulations Solid State Ionics Soviet Physics spectra spectroscopy stacking faults stress structure studied substrate superlattice surface diffusion Surface Reconstruction technique transition transmission electron microscopy trapping vacancy Wang Zhang